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N02L6181A Datasheet Ultra-low Power Asynchronous CMOS Sram

Manufacturer: onsemi

Overview: N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as ON Semiconductor’s N02L63W3A, which is processed to operate at higher voltages. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L6181A is optimal for various applications where low-power is critical such as battery backup and hand-held devices. The device can operate over a very wide temperature range of -40oC to +85oC and is available in JEDEC standard packages patible with other standard 128Kb x 16 SRAMs. ..

Key Features

  • Single Wide Power Supply Range 1.65 to 2.2 Volts.
  • Very low standby current 0.5µA at 1.8V (Typical).
  • Very low operating current 1.4mA at 1.8V and 1µs (Typical).
  • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.2V.
  • Very fast output enable access time.

More Datasheets from onsemi

Part Number Description
N02L63W2A Ultra-Low Power Asynchronous CMOS SRAM
N02L63W3A Ultra-Low Power Asynchronous CMOS SRAM
N02L83W2A Ultra-Low Power Asynchronous CMOS SRAM

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