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N02L6181A - Ultra-Low Power Asynchronous CMOS SRAM

General Description

Rev.

Key Features

  • Single Wide Power Supply Range 1.65 to 2.2 Volts.
  • Very low standby current 0.5µA at 1.8V (Typical).
  • Very low operating current 1.4mA at 1.8V and 1µs (Typical).
  • Very low Page Mode operating current 0.5mA at 1.8V and 1µs (Typical).
  • Simple memory control Single Chip Enable (CE) Byte control for independent byte operation Output Enable (OE) for memory expansion.
  • Low voltage data retention Vcc = 1.2V.
  • Very fast output enable access time.

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Datasheet Details

Part number N02L6181A
Manufacturer onsemi
File Size 239.03 KB
Description Ultra-Low Power Asynchronous CMOS SRAM
Datasheet download datasheet N02L6181A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N02L6181A 2Mb Ultra-Low Power Asynchronous CMOS SRAM 128Kx16 bit Overview The N02L6181A is an integrated memory device containing a 2 Mbit Static Random Access Memory organized as 131,072 words by 16 bits. The device is designed and fabricated using ON Semiconductor’s advanced CMOS technology to provide both high-speed performance and ultra-low power. The base design is the same as ON Semiconductor’s N02L63W3A, which is processed to operate at higher voltages. The device operates with a single chip enable (CE) control and output enable (OE) to allow for easy memory expansion. Byte controls (UB and LB) allow the upper and lower bytes to be accessed independently. The N02L6181A is optimal for various applications where low-power is critical such as battery backup and hand-held devices.